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型号	厂家	封装	批号	描述	日期

SS19	Daesan(DEC)			Schottky Barrier Rectifiers	20090603
SS19	EIC			Schottky Barrier Rectifiers	20090602
1SS199	EIC			Schottky Barrier Rectifiers	20090602
1SS198	EIC			Schottky Barrier Rectifiers	20090602
1SS196	Rectron				20090106
1SS193	Rectron				20090106
1SS190	Rectron				20090106
BSS192P	Infineon			Discretes MOSFETs Power MOSFETs	20081227
BSS192P	Infineon			Discretes MOSFETs Power MOSFETs	20081227
FSS19	Fagor			Schottky Rectifiers	20080822
1SS196	JCST	SOT-23			20080515
1SS193	JCST	SOT-23			20080515
1SS190	JCST	SOT-23			20080515
1SS196	Toshiba				20080505
1SS193	Toshiba				20080505
1SS190	Toshiba				20080505
HD74LV2GT125A	Renesas			Diode	20080504
1SS198	Renesas			Diode	20080504
1SS193	Haolin				20080415
1SS190	Haolin				20080415
BSS192_3	NXP			P-channel enhancement mode vertical D-MOS transistor	20080220
SS19	Zowie			Schottky Barrier Rectifiers	20070414
1SS193	Transys			Switching Diode SOT-23	20070414
SS19	Daesan(DEC)			Schottky Barrier Rectifiers	20070113
1SS193	MCC			Switching Diodes	20061101
FM1100	Rectron			[替换型号]Replacement General Instrument SS19	20060716
FM1100	Rectron			[替换型号]Replacement GENERAL SEMI SS19	20060716
BSS192	Philips			BSS192\|P-channel enhancement mode vertical D-MOS transistor	20060716
SS19L	TSC				20060710
SS19	TSC				20060710
KDS196	Korea Electronics			[替换型号]Replacement Toshiba 1SS196	20060614
KDS193	Korea Electronics			[替换型号]Replacement Toshiba 1SS193	20060614
KDS190	Korea Electronics			[替换型号]Replacement Toshiba 1SS190	20060614
SS19	Fairchild Semiconductor Corp				20060608
1SS193				DIODE SOT-23	20040408
1SS193				DIODE SOT-23	20040406
1SS196	JCST			Switching diodes	20040401
1SS193	JCST			Switching diodes	20040401
1SS190	JCST			Switching diodes	20040401
BSS192T/R	Philips Semiconductors			TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 150MA I(D) \| SOT-89	20031026
BSS192	Infineon Technologies AG			TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 150MA I(D) \| SOT-89	20031026
BSS192T/R	Philips Semiconductors			TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 150MA I(D) \| SOT-89	20031022
BSS192	Philips Semiconductors			TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 150MA I(D) \| SOT-89	20031022
BSS192P	Infineon(siemens)			Small Signal MOSFET. -250V. SOT-89. RDSon = 12W. -0.19A. LL	20030310
BSS192	Infineon(siemens)			Small Signal MOSFET. -240V. SOT-89. RDSon = 20W. -0.15A. LL	20030310
1SS198	Hitachi				20030213
SS19T	Honeywell Sensing and Controls	TO-243		Linear Hall-Effect Sensor	20020816
SS19	Honeywell Sensing and Controls	TO-243		Linear Hall-Effect Sensor	20020816
1SS199					20011108
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